Determination of Electronic Quality Factor, Universal Electrical Conductivity, Effective Mass and Mobility of Charge Carriers of Alloy N-SixGe1-X

Karlo Barbakadze

Sukhumi Institute of Physics and Technology, Georgia.

Giorgi Kakhniashvili

Institute of Cybernetics of Georgian Technical University, Georgia.

Zurab Adamia

Tbilisi State University, Georgia and University of Georgia, Georgia.

Irakli Nakhutsrishvili *

Institute of Cybernetics of Georgian Technical University, Georgia.

*Author to whom correspondence should be addressed.


Abstract

The temperature dependences of the electronic quality factor and the universal electrical conductivity of n-type SixGe1-x, as well as the dependences of the Seebeck coefficient on the specific and the universal conductivities, are studied. The effective masses and mobilities of charge carriers are calculated for different temperatures, temperature dependences of the eleqtronic quality factor and the thermoelectric figure of merit are studied. Based on the investigated n-SixGe1-x (x=0.83) together with p-Si0.83Ge0.17, a thermoelectric module was manufactured and its energetic characteristics were studied.

Keywords: Thermoelectric sige, electronic quality factor, universal electrical conductivity


How to Cite

Barbakadze , Karlo, Giorgi Kakhniashvili, Zurab Adamia, and Irakli Nakhutsrishvili. 2023. “Determination of Electronic Quality Factor, Universal Electrical Conductivity, Effective Mass and Mobility of Charge Carriers of Alloy N-SixGe1-X”. Journal of Materials Science Research and Reviews 6 (4):730-36. https://www.journaljmsrr.com/index.php/JMSRR/article/view/283.

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References

Schwinge C. et al. Optimization of LPCVD phosphorous-doped Si Ge thin films for CMOS-compatible thermoelectric applications. Appl Phys Lett. 2022;120 :art.# 031903.

Big-Alabo A. Finite element modelling and optimization of Ge/Si Ge super lattice based thermoelectric generators. Appl Sci. 2021;3:art.#189.

Jang K. et al. Electrical and structural characteristics of excimer laser-crystallized polycrystalline Si1-xGex thin-film transistors. Materials. 2019;12:art.#1739.

Murata H. et al. Si1-xGex anode synthesis on plastic films for flexible rechargeable batteries. Sci Report. 2022;12:13779.

Idda A, Ayat L, Dahbi N. Improving the performance of hydrogenated amorphous silicon solar cell using a-SiGe:H Alloy. Ovonic Res. 2019;15:271–278.

Singh AK. et al. Heterostructure silicon and germanium alloy based thin film solar cell efficiency analysis. Engin and Manufacturing. 2020;2:29–40.

Zimmerman H. SiGe photodetectors, chapt. in Silicon optoelectronic integrated circuits. 2004: 95-99.

Aberl J. et al. SiGe quantum well infrared photo detectors on strained-silicon-on-insulator. Opt Express. 2019;27:32009–32018.

Duhan N, Mishra BK, Singh IV. XFEM simulation of dislocation in SixGe1-x alloy under thermal loads. Proc. Structural Integrity. 2022;42:863-870.

Cardenas IA, Siu TC, Shimono MG, Thai S. Installing quaternary germanium centers in sila- diamondoid cores via skeletal isomerization. Inorg. Chem; 2023.

DOI: 10.26434/chemrxiv-2023-dk558.

G.Bokuchava, I.Nakhutsrishvili, K.Barbakadze. Monolithic module based on Si0.7Ge0.3 alloy for thermoelectric generator. AJ Sci. and Technology. 2023;14: is in print.

Bokuchava G. Physical-mechanical and electrophysical properties of polycrystalline silicon-germanium alloys. Thesis, Tbilisi. 2008:135.

Zhang X et al. Electronic quality factor for thermoelectrics. Sci.Advances. 2020;6:art.# eabc0726.

Snyder GJ, Toberer E. Complex thermoelectric materials. Nature Materials. 2008;7:105-114.

Bokuchava G, Nakhutsrishvili I, Barbakhadze K. Some thermoelectric parameters of alloy p-SiGe. Bull. Georg. Acad. Sci. 2023;17: is in print.

Nakhutsrishvili I et al. Dependence of the Seebeck coefficient on specific and universal elecyrical conductivities of Bi2Sr2Co1.8Oy thermoelectric doped with strontium borate and graphene. Materials Sci. Res. and Rev. 2023;6:670-675.

Zevalkink A et al. A practical field guide to thermoelectrics. Appl. Phys. Rev. 2018;5: 021303.

Namiki H et al. Relationship between the density of states effective mass and carrier concentration of thermoelectric phosphide Ag6Ge10P12 with strong mechanical robustness. Materials Today Sustain. 2022;18: art.#100116.

Hong, M, Li, M. et al.,Advances in versatile GeTe thermoelectrics from materials to devices. Adv. Materials. 2022;35:art.# 2208272.

Snyder GJ et al. Weighted mobility. Sci. Advances. 2020;25:art.# 2001537.

Scha ̈ffer F. Silicon-Germanium (SixGe1-x). chapt. in Properties of Advanced Semiconductor Materials. 2001:1, Heavily 49-188.

Dismukes JD et al. Thermal and electrical properties of heavily doped Ge‐Si alloys up to 1300oK. Appl. Phys. 1964;35:2899–2907.